III-Nitride Emitters for Solid-State Lighting and Displays

III-Nitride semiconductors have a huge direct-bandgap range, from 0.7 eV to 6.2 eV. Theoretically, by tuning the alloy composition, the III-Nitride ternary alloys (InGaN, AlGaN, and AlInN) or quaternary alloy (AlInGaN) can be designed to cover any wavelength from deep-ultraviolet (UV) to infrared (IR). The last decade has seen remarkable progress, creating some of the highest efficiency light sources by using InGaN-based multiple quantum wells (MQWs) as active layers for violet-blue light emitting diodes (LEDs). However, the same theoretical potential is yet to be realized in longer wavelength emitters. In this talk, the current challenges in realizing high efficiency green-red III-Nitride emitters and the efforts to overcome them will be discussed.