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III-Nitride Emitters for Solid-State Lighting and Displays


III-Nitride semiconductors have a huge direct-bandgap range, from 0.7 eV to 6.2 eV. Theoretically, by tuning the alloy composition, the III-Nitride ternary alloys (InGaN, AlGaN, and AlInN) or quaternary alloy (AlInGaN) can be designed to cover any wavelength from deep-ultraviolet (UV) to infrared (IR). The last decade has seen remarkable progress, creating some of the highest efficiency light sources by using InGaN-based multiple quantum wells (MQWs) as active layers for violet-blue light emitting diodes (LEDs). However, the same theoretical potential is yet to be realized in longer wavelength emitters. In this talk, the current challenges in realizing high efficiency green-red III-Nitride emitters and the efforts to overcome them will be discussed.

Speaker Profile

Syed Ahmed Al Muyeed
Graduate Research Assistant
Dept. of Electrical and Computer Engineering
Lehigh University, Bethlehem, PA
Ph.D. in Electrical Engineering (September 2016 – present)
Lehigh University, Bethlehem, PA
Advisor: Jonathan J. Wierer, Jr., Ph.D.
Dissertation Title: III-Nitride interlayer active region light emitters in the visible range
M.S. in Electrical and Electronic Engineering (January 2015 – June 2016)
University of Dhaka, Bangladesh
Track: Applied Physics and Material Science
B.S. in Appl. Phys., Electronics and Communication Engineering (Feburary 2010 – December 2014)
University of Dhaka, Bangladesh