III-Nitride Emitters for Solid-State Lighting and Displays 05 December 2020 7:00 PM Description III-Nitride semiconductors have a huge direct-bandgap range, from 0.7 eV to 6.2 eV. Theoretically, by tuning the alloy composition, the III-Nitride ternary alloys (InGaN, AlGaN, and AlInN) or quaternary alloy (AlInGaN) can be designed to cover any wavelength from deep-ultraviolet (UV) to infrared (IR). The last decade has seen remarkable progress, creating some of the highest efficiency…